CLF1G0035-50 is a 50 W broadband RF power GaN HEMT amplifier operating from DC to 3.5 GHz, designed for applications such as wireless infrastructure, radar, and EMC testing. It is housed in a flanged ceramic package (SOT467C) with two mounting holes and two leads. The device operates at a drain-source voltage of up to 50 V and can withstand a load mismatch of VSWR 10:1. Its maximum junction temperature is 250 °C, with a thermal resistance from junction to case of 2.1 K/W. Class-AB performance at 25 °C delivers 50 W output power with gain between 11 and 14 dB and drain efficiency up to 65% under pulsed conditions. It complies with IEC 60134 for absolute maximum ratings and is classified as ESD Class 1B per JEDEC JESD22-A114F.
CLF1G0035-50 - 50W BROADBAND RF
| ODG (Origin Data Global) | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | CLF1G0035-50 |
| Product Name | RF FETs, MOSFETs |
| Polarity | GaN HEMT |
