C4H2350N10X is a 10W GaN power transistor in a DFN-4.5x4-6-1 surface-mount package, designed for base station RF amplifiers operating from 2300 MHz to 5000 MHz. The device features a drain-source voltage rating of up to 150 V, a gate-source voltage range of -15 V to +2 V, and operates with a maximum case temperature of 140°C. It is RoHS compliant and exhibits high efficiency and excellent digital pre-distortion performance. The part is housed in a dry-pack, 3000-piece reel with 12 mm tape width. Thermal resistance from channel to case is 15.40 K/W under specified conditions.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1603-C4H2350N10XTR-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 6-VDFN Exposed Pad |
