5W GaN power transistor for base station RF amplifiers in the 2300MHz to 5000MHz range, packaged in a DFN-4.5x4-6-1 surface-mount case with an exposed ground backside. Operates with a supply voltage up to 52V and drain-source voltage up to 150V. Features a gate-source threshold voltage range of -3.45V to -2.15V, a quiescent drain current of 10mA, and delivers 4.3W output power at 3dB gain compression with a typical power gain of 18.6dB and drain efficiency of 12% under pulsed CW conditions. Thermal resistance from channel to case is 25.9 K/W. RoHS compliant.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1603-C4H2350N05XTR-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 6-VDFN Exposed Pad |
