C4H2327N55PX is a 50W gallium nitride (GaN) power transistor in a DFN-7x6.5-6-1 package, designed for base station amplifier applications in the 2300MHz to 2690MHz band. The device features an exposed backside ground terminal, internal matching, and is rated for a maximum drain-source voltage of 150V and a case operating temperature up to 140°C. It supports a supply voltage up to 52V and meets RoHS compliance requirements. The part is supplied in a tape and reel packaging with a minimum order quantity of 3000 pieces.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1603-C4H2327N55PXTR-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 6-VDFN Exposed Pad |
