Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs BLS9G2731L-400

BLS9G2731L-400 is a 400W LDMOS power transistor designed for S-band radar applications in the 2700 MHz to 3100 MHz frequency range. It is housed in a flanged ceramic package (SOT502A) with two mounting holes and two leads, where the source is connected to the flange. The device operates with a drain-source voltage of up to 65 V and a junction temperature of up to 225 °C. It demonstrates a typical power gain of 13 dB and drain efficiency of 47% at 32 V, 400 mA bias, and 425 W output power under pulsed RF conditions. The transistor is internally matched, features integrated ESD protection, and is compliant with RoHS Directive 2002/95/EC. It withstands a load mismatch of VSWR=10:1 under class-AB operation at 400 W output power and 32 V drain voltage.