BLP15H9S30G is a 30W LDMOS power transistor designed for broadband operation in broadcast and industrial applications from HF to 2GHz. It is packaged in a TO-270-2G-1 case with dimensions of 10.67mm x 8.7mm, featuring a drain flange for thermal mounting. The device supports a drain-source voltage up to 106V, operates with a junction temperature up to 225°C, and has a thermal resistance of 1.9K/W. It delivers 22dB power gain and 63% drain efficiency at 1400MHz with 30W output, and is rated for 68% efficiency in CW mode at 350MHz. The transistor exhibits high ruggedness withstanding VSWR up to 30:1, and includes integrated dual-sided ESD protection. It meets RoHS compliance requirements.
RF MOSFET LDMOS 50V SOT1483-1
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1603-BLP15H9S30GXYTR-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | SOT-1483-1 |
