The BLP15H9S100G is a 100W LDMOS transistor designed for broadband RF amplifier applications in broadcast and industrial systems from HF to 2GHz. It is packaged in a TO-270-2G-1 case with an integrated heat sink, measuring 10.67mm by 8.7mm maximum including mold protrusions. The device operates with a maximum drain-source voltage of 106V and junction temperature of 225°C, featuring a thermal resistance from junction to case of 0.57 K/W. It demonstrates high efficiency up to 62% and power gain up to 25dB under specified conditions, with integrated ESD protection and ruggedness to withstand VSWR up to 30:1. The part complies with RoHS standards.
RF MOSFET LDMOS 50V SOT1483-1
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 1603-BLP15H9S100GXYTR-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | SOT-1483-1 |
