The BLM9D2327S-50PBG is a dual-section, 2-stage integrated Doherty MMIC using GEN9 LDMOS technology for RF power amplification in the 2300 MHz to 2700 MHz range. It is packaged in a plastic, heatsink small outline package (OMP-780-16G-1) with 16 leads and an exposed ground flange. The device integrates input splitters, output combiners, and ESD protection, with independently biased carrier and peaking stages. It delivers 47.7 dBm output power at 2600 MHz with 25.7% drain efficiency under LTE 20 MHz single-carrier conditions. It meets RoHS compliance and supports VSWR up to 10:1 under load mismatch conditions. Thermal resistance from junction to case is 2 K/W at 10 W output power.
RF FET Product overview: BLM9D2327S-50PBG from Ampleon USA Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF Amplifiers. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 860-BLM9D2327S-50PBG
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 860-BLM9D2327S-50PBG |
| Product Name | MOSFET Transistor |
| Package Type | Tape & Reel (TR) |
