The BLM9D1822-30B is a dual LDMOS transistor designed for RF applications, specifically within the frequency range of 1800 MHz to 2200 MHz. It features a fully integrated Doherty MMIC solution that includes an input splitter and output combiner, making it suitable for use as a general-purpose driver or in small cell final applications. The device operates with a rated drain-source voltage of 65 V and a test voltage of 28 V, delivering an output power of 45.9 dBm and a power gain of 29.3 dB. It is packaged in a 20-QFN format with an exposed pad for enhanced thermal performance and is compliant with RoHS standards. The BLM9D1822-30B also offers independent control of carrier and peaking bias, integrated ESD protection, and excellent thermal stability, making it a reliable choice for multi-carrier and multi-standard base station applications.
BLM9D1822-30B/SOT146
Win Source Part Number: 1278448-BLM9D1822-30
Category: Discrete Semiconductor Products>Transistors
Package: Tape & Reel
Standard Package: 500
Voltage - Rated: 65 V
Frequency: 1.8GHz ~ 2.2GHz
Current - Test: 110 mA
Gain: 29.3dB
Transistor Type: LDMOS (Dual)
Voltage - Test: 28 V
Power - Output: 45.9dBm
Package / Case: 20-QFN Exposed Pad
Supplier Device Package: 20-PQFN (8x8)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 3 (168 Hours)
Current Rating (Amps): 1.4µA
HTSUS: 8542.33.0001
Mfr: Ampleon USA Inc.
Other Names: 934960252515,1603-BL
Base Product Number: BLM9
| ODG (Origin Data Global) | Win Source Electronics | |
|---|---|---|
| Product Category | RF MOSFET Transistors | Transistors |
| Product Number | BLM9D1822-30BZ | 1278448-BLM9D1822-30BZ |
| Product Name | RF FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF |
| Power Gain | 29.3 dB |
