Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF BLM9D1822-30BZ

The BLM9D1822-30B is a dual LDMOS transistor designed for RF applications, specifically within the frequency range of 1800 MHz to 2200 MHz. It features a fully integrated Doherty MMIC solution that includes an input splitter and output combiner, making it suitable for use as a general-purpose driver or in small cell final applications. The device operates with a rated drain-source voltage of 65 V and a test voltage of 28 V, delivering an output power of 45.9 dBm and a power gain of 29.3 dB. It is packaged in a 20-QFN format with an exposed pad for enhanced thermal performance and is compliant with RoHS standards. The BLM9D1822-30B also offers independent control of carrier and peaking bias, integrated ESD protection, and excellent thermal stability, making it a reliable choice for multi-carrier and multi-standard base station applications.