Ampleon RF FETs, MOSFETs BLM10D3740-35ABZ

Description
BLM10D3740-35AB/SOT1 462/REELDP
Description
BLM10D3740-35AB/SOT1 462/REELDP
Datasheet
Datasheet Summary
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The BLM10D3740-35AB is a 3-stage integrated Doherty MMIC for 5G small cell and massive MIMO base stations, operating from 3700 MHz to 4000 MHz. Packaged in a PQFN20 case measuring 8.0 x 8.0 x 2.1 mm, it features an integrated input splitter, output combiner, and 30 Ω pre-match network. The device supports independent carrier and peaking bias control and has an exposed ground flange. It delivers 33.1 dB gain and 39% drain efficiency under 1-carrier LTE conditions at 3900 MHz with 5 W output power. Thermal resistance is 3.2 K/W at 5 W. ESD protection complies with HBM Class 1B and CDM Class C2A. RoHS compliant.

Datasheet Summary
Powered by GS/AI

The BLM10D3740-35AB is a 3-stage integrated Doherty MMIC for 5G small cell and massive MIMO base stations, operating from 3700 MHz to 4000 MHz. Packaged in a PQFN20 case measuring 8.0 x 8.0 x 2.1 mm, it features an integrated input splitter, output combiner, and 30 Ω pre-match network. The device supports independent carrier and peaking bias control and has an exposed ground flange. It delivers 33.1 dB gain and 39% drain efficiency under 1-carrier LTE conditions at 3900 MHz with 5 W output power. Thermal resistance is 3.2 K/W at 5 W. ESD protection complies with HBM Class 1B and CDM Class C2A. RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
RF FETs, MOSFETs - BLM10D3740-35ABZ - ODG (Origin Data Global)
Shenzhen, China
RF FETs, MOSFETs
BLM10D3740-35ABZ
RF FETs, MOSFETs BLM10D3740-35ABZ
BLM10D3740-35AB/SOT1 462/REELDP

BLM10D3740-35AB/SOT1462/REELDP

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category RF MOSFET Transistors
Product Number BLM10D3740-35ABZ
Product Name RF FETs, MOSFETs
Power Gain 34.2 dB
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