Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF BLM10D3438-35ABZ

The BLM10D3438-35AB is a 3-stage fully integrated asymmetrical Doherty MMIC using LDMOS technology, designed for RF power amplification in 5G small cell and massive MIMO base stations operating from 3400 MHz to 3800 MHz. It is housed in a PQFN20 package with an 8.0 mm × 8.0 mm × 2.1 mm body and features an exposed thermal ground pad. Integrated components include an input splitter, output combiner, and pre-match network, providing a 50 Ω input and 30 Ω output impedance. The device supports independent carrier and peaking bias control, offers up to 35.4 dB power gain and 51.3% drain efficiency, and is ruggedized to withstand a 10:1 VSWR load mismatch. It meets ESD standards with HBM class 1B and CDM class C2A, and is RoHS compliant. The junction temperature rating is 200 °C, with thermal resistance from junction to case of 3.2 K/W at 5 W output power.