Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF BLM10D2327-40ABZ

Description
Win Source Part Number: 1000101-BLM10D2327-4 0ABZ Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Tape & Reel Standard Package: 500 Voltage - Rated: 65 V Frequency: 2.5GHz ~ 2.7GHz Current - Test: 46 mA Gain: 28dB Transistor Type: LDMOS Voltage - Test: 28 V Package / Case: 20-QFN Exposed Pad Supplier Device Package: 20-PQFN (8x8) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 3 (168 Hours) Current Rating (Amps): 1.4µA HTSUS: 8542.33.0001 Mfr: Ampleon USA Inc. Other Names: 934960235515,1603-BL M10D2327-40ABZTR,160 3-BLM10D2327-40ABZDK R,1603-BLM10D2327-40 ABZCT Base Product Number: BLM10
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Description
Win Source Part Number: 1000101-BLM10D2327-4 0ABZ Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Tape & Reel Standard Package: 500 Voltage - Rated: 65 V Frequency: 2.5GHz ~ 2.7GHz Current - Test: 46 mA Gain: 28dB Transistor Type: LDMOS Voltage - Test: 28 V Package / Case: 20-QFN Exposed Pad Supplier Device Package: 20-PQFN (8x8) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 3 (168 Hours) Current Rating (Amps): 1.4µA HTSUS: 8542.33.0001 Mfr: Ampleon USA Inc. Other Names: 934960235515,1603-BL M10D2327-40ABZTR,160 3-BLM10D2327-40ABZDK R,1603-BLM10D2327-40 ABZCT Base Product Number: BLM10
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Datasheet
Datasheet Summary
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The BLM10D2327-40ABZ is a 2-stage fully integrated asymmetrical Doherty MMIC using Ampleon's GEN10 LDMOS technology, designed as a final-stage amplifier for small cell and massive MIMO applications in the 2500 MHz to 2700 MHz frequency range. It is packaged in a PQFN20 thermally enhanced quad flat package with dimensions of 8.0 x 8.0 x 2.1 mm and features an exposed ground pad. The device integrates an input splitter, output combiner, and pre-match network, providing a 20Ω output impedance and 50Ω input impedance. It supports independent biasing of carrier and peaking stages, offers a maximum drain-source voltage of 65 V, and achieves typical drain efficiency of 44% at 28 V supply and 5.75 W output power. The part meets RoHS compliance and is designed for applications in GSM, W-CDMA, and LTE base stations.

Datasheet Summary
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The BLM10D2327-40ABZ is a 2-stage fully integrated asymmetrical Doherty MMIC using Ampleon's GEN10 LDMOS technology, designed as a final-stage amplifier for small cell and massive MIMO applications in the 2500 MHz to 2700 MHz frequency range. It is packaged in a PQFN20 thermally enhanced quad flat package with dimensions of 8.0 x 8.0 x 2.1 mm and features an exposed ground pad. The device integrates an input splitter, output combiner, and pre-match network, providing a 20Ω output impedance and 50Ω input impedance. It supports independent biasing of carrier and peaking stages, offers a maximum drain-source voltage of 65 V, and achieves typical drain efficiency of 44% at 28 V supply and 5.75 W output power. The part meets RoHS compliance and is designed for applications in GSM, W-CDMA, and LTE base stations.

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - 1000101-BLM10D2327-40ABZ - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
1000101-BLM10D2327-40ABZ
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF 1000101-BLM10D2327-40ABZ
Win Source Part Number: 1000101-BLM10D2327-4 0ABZ Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF Package: Tape & Reel Standard Package: 500 Voltage - Rated: 65 V Frequency: 2.5GHz ~ 2.7GHz Current - Test: 46 mA Gain: 28dB Transistor Type: LDMOS Voltage - Test: 28 V Package / Case: 20-QFN Exposed Pad Supplier Device Package: 20-PQFN (8x8) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 3 (168 Hours) Current Rating (Amps): 1.4µA HTSUS: 8542.33.0001 Mfr: Ampleon USA Inc. Other Names: 934960235515,1603-BL M10D2327-40ABZTR,160 3-BLM10D2327-40ABZDK R,1603-BLM10D2327-40 ABZCT Base Product Number: BLM10

Win Source Part Number: 1000101-BLM10D2327-40ABZ
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - RF
Package: Tape & Reel
Standard Package: 500
Voltage - Rated: 65 V
Frequency: 2.5GHz ~ 2.7GHz
Current - Test: 46 mA
Gain: 28dB
Transistor Type: LDMOS
Voltage - Test: 28 V
Package / Case: 20-QFN Exposed Pad
Supplier Device Package: 20-PQFN (8x8)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 3 (168 Hours)
Current Rating (Amps): 1.4µA
HTSUS: 8542.33.0001
Mfr: Ampleon USA Inc.
Other Names: 934960235515,1603-BLM10D2327-40ABZTR,1603-BLM10D2327-40ABZDKR,1603-BLM10D2327-40ABZCT
Base Product Number: BLM10

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Technical Specifications

  Win Source Electronics
Product Category RF MOSFET Transistors
Product Number 1000101-BLM10D2327-40ABZ
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF
Power Gain 28 dB
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