Ampleon TRANSISTORS - Transistors - FETs, MOSFETs - RF - BLL6H1214LS-250,11 BLL6H1214LS-250,11

The BLL6H1214LS-250,11 is a 250 W LDMOS power transistor designed for L-band radar applications, specifically operating within the frequency range of 1.2 GHz to 1.4 GHz. It features a typical power gain of 17 dB and a drain efficiency of 55% when tested under pulsed RF conditions at a supply voltage of 50 V and a quiescent drain current of 100 mA. The device is internally matched for ease of use and offers high flexibility with respect to pulse formats, making it suitable for various radar applications. This transistor is housed in an earless flanged ceramic package (SOT502B) and is compliant with the RoHS Directive 2002/95/EC. It includes integrated ESD protection, ensuring reliability during handling and operation. The maximum drain-source voltage is rated at 100 V, with a maximum drain current of 42 A and a junction temperature limit of 200 °C. The BLL6H1214LS-250,11 is characterized by excellent thermal stability and ruggedness, making it a robust choice for demanding RF applications.