Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF BLF8G27LS-100PU

BLF8G27LS-100P is a 100W LDMOS power transistor designed for base station applications in the 2500 MHz to 2700 MHz frequency range. It features an earless flanged ceramic package (SOT1121B) with four leads, where the source terminal is connected to the flange. The device supports a maximum drain-source voltage of 65 V and a junction temperature of 225 °C, with a thermal resistance from junction to case of 0.374 K/W at 25 W power. It is internally matched, includes integrated ESD protection, and meets RoHS compliance. The transistor delivers 18 dB of power gain and 33% drain efficiency under W-CDMA conditions at 28 V and 860 mA, with an ACPR of -35 dBc at 5 MHz offset. It is rated for operation under VSWR of 10:1 mismatch conditions at 100 W CW power.