Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF BLF8G24L-200P,118

BLF8G24L-200P is a 200W LDMOS power transistor designed for base station applications in the 2300 MHz to 2400 MHz frequency range. It is housed in a flanged balanced ceramic package (SOT539A) with two mounting holes and four leads. The device has a drain-source voltage rating of 65 V, a maximum junction temperature of 200 °C, and a thermal resistance from junction to case of 0.217 K/W at 60 W output power. It delivers 60 W average output power with a power gain of 17.2 dB and drain efficiency of up to 32% under 1-carrier W-CDMA conditions. The transistor features internal matching, integrated ESD protection, and is rated for VSWR=10:1 load mismatch ruggedness. It meets RoHS Directive 2002/95/EC.