Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF BLF8G22LS-240J

The BLF8G22LS-240 is a 240W LDMOS power transistor designed for base station applications in the 2110 MHz to 2170 MHz frequency range. It features an earless flanged ceramic package (SOT502B) with the source connected to the flange. The device offers high efficiency, excellent ruggedness withstanding a VSWR of 10:1, and is internally matched for ease of use. With a maximum drain-source voltage of 65 V and a junction temperature rating of 225 °C, it operates efficiently under continuous wave conditions with a thermal resistance from junction to case of 0.263 K/W. The transistor includes integrated ESD protection and complies with RoHS Directive 2002/95/EC.