BLF7G27LS-75P is a 75W LDMOS power transistor designed for W-CDMA base station RF power amplifiers operating between 2300 MHz and 2700 MHz. It features an earless flanged ceramic package (SOT1121B) with four leads and a source-connected flange. The device supports a drain-source voltage up to 65 V and a maximum drain current of 18 A, with a junction temperature rating of 225 °C. It offers high efficiency, excellent ruggedness withstanding a VSWR of 10:1, and internal matching for ease of use. The transistor includes integrated ESD protection and complies with RoHS Directive 2002/95/EC.
RF FET LDMOS 65V 17DB SOT1121B / Trans RF MOSFET N-CH 65V 18A 5-Pin CDFM Bulk Product overview: BLF7G27LS-75P,112 from Ampleon USA Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 65V, 18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 65V, 18A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-BLF7G27LS-75P,11
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-BLF7G27LS-75P,112 |
| Product Name | 65V 18A MOSFET Transistor |
| Package Type | Tube |
