Ampleon RF FETs, MOSFETs BLF7G24LS-160P,112

Description
RF Mosfet LDMOS (Dual), Common Source 28V 1.2A 2.3GHz ~ 2.4GHz 18.5dB 30W SOT539B
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Description
RF Mosfet LDMOS (Dual), Common Source 28V 1.2A 2.3GHz ~ 2.4GHz 18.5dB 30W SOT539B
Request a Quote
Datasheet
Datasheet Summary
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BLF7G24LS-160P is a 160 W LDMOS power transistor in an earless flanged balanced ceramic package (SOT539B) designed for RF power amplifiers in base stations operating between 2300 MHz and 2400 MHz. It features internal matching, integrated ESD protection, and is capable of withstanding a VSWR of 10:1 under full power conditions. The device has a maximum drain-source voltage of 65 V, a junction temperature rating of 200 °C, and a thermal resistance from junction to case of 0.2 K/W. It is RoHS compliant.

Datasheet Summary
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BLF7G24LS-160P is a 160 W LDMOS power transistor in an earless flanged balanced ceramic package (SOT539B) designed for RF power amplifiers in base stations operating between 2300 MHz and 2400 MHz. It features internal matching, integrated ESD protection, and is capable of withstanding a VSWR of 10:1 under full power conditions. The device has a maximum drain-source voltage of 65 V, a junction temperature rating of 200 °C, and a thermal resistance from junction to case of 0.2 K/W. It is RoHS compliant.

Suppliers

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Product
Description
Supplier Links
RF FETs, MOSFETs - BLF7G24LS-160P,112-ND - DigiKey
Thief River Falls, MN, United States
RF FETs, MOSFETs
BLF7G24LS-160P,112-ND
RF FETs, MOSFETs BLF7G24LS-160P,112-ND
RF Mosfet LDMOS (Dual), Common Source 28V 1.2A 2.3GHz ~ 2.4GHz 18.5dB 30W SOT539B

RF Mosfet LDMOS (Dual), Common Source 28V 1.2A 2.3GHz ~ 2.4GHz 18.5dB 30W SOT539B

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number BLF7G24LS-160P,112-ND
Product Name RF FETs, MOSFETs
Package Type SOT-539B
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