Ampleon RF FETs, MOSFETs BLF7G22LS-250P,112

BLF7G22LS-250P is a 250W LDMOS power transistor designed for W-CDMA base station applications in the 2110 MHz to 2170 MHz frequency range. It features an earless flanged ceramic package (SOT539B) with four leads and a source connected to the flange. The device operates with a drain-source voltage of up to 65 V and a gate-source voltage of up to 13 V, and supports a maximum junction temperature of 200 °C. It offers a typical drain efficiency of 31% and a power gain of 18.5 dB under 2-carrier W-CDMA conditions at 70 W output power and 28 V drain bias. The transistor includes integrated ESD protection and is compliant with RoHS Directive 2002/95/EC. It is rated to withstand a VSWR of 10:1 under full output power conditions.