Ampleon RF FETs, MOSFETs BLF7G20LS-90PH

BLF7G20LS-90P is a 90 W LDMOS power transistor for base station applications, designed for operation in frequency bands from 1427 MHz to 1525 MHz, 1805 MHz to 1880 MHz, and 2110 MHz to 2170 MHz. It features an earless flanged ceramic package (SOT1121B) with the source connected to the flange. The device offers high efficiency, excellent ruggedness withstood up to VSWR of 10:1, and is internally matched for ease of use. The maximum drain-source voltage is 65 V, the junction temperature rating is 200 °C, and thermal resistance from junction to case is 0.49 K/W at 90 W output power. It is compliant with RoHS Directive 2002/95/EC.