BLF6G22-180RN is a 180 W LDMOS power transistor designed for RF power amplifiers in base station applications from 2000 MHz to 2200 MHz, with an SOT502A flanged ceramic package and two mounting holes. It delivers 40 W average output power at 2110-2170 MHz with 16.0 dB gain and 25% efficiency under 2-carrier W-CDMA conditions at 30 V drain voltage and 1400 mA quiescent current. The device features integrated ESD protection, high ruggedness withstanding a VSWR of 10:1, and a thermal resistance from junction to case of 0.50 K/W. It operates with a maximum drain-source voltage of 65 V and junction temperature of 225 °C, and complies with RoHS Directive 2002/95/EC.
Win Source Part Number: 1224366-BLF6G22-180R
Category: Discrete Semiconductor Products>Transistors
Package: Tray
Standard Package: 20
Voltage - Rated: 65 V
Frequency: 2.11GHz ~ 2.17GHz
Current - Test: 1.4 A
Gain: 16dB
Transistor Type: LDMOS
Voltage - Test: 30 V
Power - Output: 40W
Package / Case: SOT-502A
Supplier Device Package: SOT502A
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 1 (Unlimited)
Current Rating (Amps): 49A
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Ampleon USA Inc.
Other Names: 568-8647,BLF6G22-180
Base Product Number: BLF6G22
Product Status: Obsolete
| Win Source Electronics | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | 1224366-BLF6G22-180RN,112 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF |
| Output Power | 40 watts |
