BLF6G20LS-180RN is an LDMOS power transistor designed for base station applications in the 1800 MHz to 2000 MHz frequency range. It is housed in an earless flanged ceramic package (SOT502B) with two leads and a flange connected to the source. The device provides 40 W average output power at 30 V drain supply voltage and 1400 mA quiescent current, with 17.2 dB power gain and 27% drain efficiency under 2-carrier WCDMA conditions. It features integrated ESD protection, high ruggedness withstanding VSWR up to 10:1, and operates with a maximum junction temperature of 225 °C. Thermal resistance from junction to case is 0.37 K/W. The part is RoHS compliant.
Win Source Part Number: 1049344-BLF6G20LS-18
Category: Discrete Semiconductor Products>Transistors
Package: Tray
Standard Package: 20
Voltage - Rated: 65 V
Frequency: 1.93GHz ~ 1.99GHz
Current - Test: 1.4 A
Gain: 17.2dB
Transistor Type: LDMOS
Voltage - Test: 30 V
Power - Output: 40W
Package / Case: SOT-502B
Supplier Device Package: SOT502B
Alternative Parts (Cross-Reference): BLF6G20LS-180RN,11BL
ECCN: EAR99
Fake Threat In the Open Market: 58 pct.
MSL Level: 1 (Unlimited)
Current Rating (Amps): 49A
REACH Status: REACH Unaffected
HTSUS: 8541.29.0075
Mfr: Ampleon USA Inc.
Other Names: BLF6G20LS-180RN,11-N
Base Product Number: BLF6G20
Product Status: Obsolete
| Win Source Electronics | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | 1049344-BLF6G20LS-180RN,11 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF |
| Output Power | 40 watts |
