Ampleon Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF BLF6G15L-40BRN,112

BLF6G15L-40BRN is a 40W LDMOS power transistor designed for base station applications in the 1450 MHz to 1550 MHz frequency range. It is housed in a flanged ceramic package (SOT1112A) with six leads and two mounting holes. The device features integrated ESD protection, an integrated current sense, and is internally matched for ease of use. Under class-AB operation at 28 V drain supply voltage and 330 mA quiescent current, it provides a typical output power of 2.5 W, a power gain of 22.0 dB, an efficiency of 13.0%, and an adjacent channel power ratio of -45 dBc. It can withstand a load mismatch of VSWR=10:1 and has a maximum drain-source voltage of 65 V. The junction temperature rating is 200 °C, with a thermal resistance from junction to case of 1.6 K/W. The part is RoHS compliant.