Ampleon RF FETs, MOSFETs BLA0912-250R

BLA0912-250R is an N-channel enhancement mode LDMOS transistor designed for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range, such as Mode-S, TCAS, and JTIDS. It is packaged in a 2-lead SOT502A flange mount with ceramic cap, with the source connected to the mounting flange. The device operates with a drain-source voltage up to 75 V, delivers 250 W output power at 100 μs pulse width and 10% duty cycle, and provides a power gain of 13.5 dB. Thermal resistance from junction to heatsink is 0.18 K/W under standard test conditions. The transistor supports load VSWR up to 5:1 and has a junction temperature rating of 200 °C.