Ampleon BLA0912-250

Description
BLA0912-250 - N-Channel LDMOS Avionics LDMOS Transistor
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Description
BLA0912-250 - N-Channel LDMOS Avionics LDMOS Transistor
Request a Quote
Datasheet
Datasheet Summary
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BLA0912-250 is an N-channel enhancement mode lateral D-MOS transistor for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range, housed in a 2-lead SOT502A flange package with ceramic cap and two mounting holes. The source is connected to the flange, eliminating DC isolators. It handles up to 250 W load power at 36 V drain-source voltage, with a power gain of 13 dB and drain efficiency of 50% under pulsed conditions. Junction temperature rating is 200 °C, and thermal impedance from junction to heatsink is 0.18 K/W. The device withstands a 5:1 VSWR load mismatch under rated conditions. It meets IEC 60134 for absolute maximum ratings.

Datasheet Summary
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BLA0912-250 is an N-channel enhancement mode lateral D-MOS transistor for avionics transmitter applications in the 960 MHz to 1215 MHz frequency range, housed in a 2-lead SOT502A flange package with ceramic cap and two mounting holes. The source is connected to the flange, eliminating DC isolators. It handles up to 250 W load power at 36 V drain-source voltage, with a power gain of 13 dB and drain efficiency of 50% under pulsed conditions. Junction temperature rating is 200 °C, and thermal impedance from junction to heatsink is 0.18 K/W. The device withstands a 5:1 VSWR load mismatch under rated conditions. It meets IEC 60134 for absolute maximum ratings.

Suppliers

Company
Product
Description
Supplier Links
 - BLA0912-250 - Rochester Electronics
Newburyport, MA, United States
BLA0912-250 - N-Channel LDMOS Avionics LDMOS Transistor

BLA0912-250 - N-Channel LDMOS Avionics LDMOS Transistor

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Transistors
Product Number BLA0912-250
Polarity N-Channel
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