Ampleon RF FETs, MOSFETs B10H0608N40DYZ

The B10H0608N40D is a dual-section, 2-stage fully integrated Doherty MMIC driver using 50V LDMOS technology, designed for 4G/5G macrocell and microcell base stations in the 600MHz to 800MHz frequency range. It features integrated input splitters, output combiners, pre-matched outputs, and independent bias control for carrier and peaking devices. The device is housed in a 12mm × 8mm LGA package with an exposed ground pad. It delivers 34 dBm output power with 29.9 dB gain and 28.9% drain efficiency under 1-carrier LTE 20MHz test conditions at 681.5MHz and 48V drain voltage. The part includes integrated ESD protection and requires no output circulator when used in a quad-combined configuration. The B10H0608N40DYZ variant is supplied in a tape-and-reel package of 500 pieces.