Ampleon RF FETs, MOSFETs B10G2022N10DLX

The B10G2022N10DL is a 2-stage fully integrated Doherty MMIC using LDMOS technology, designed for RF power amplification in small cell base stations operating between 2110 MHz and 2170 MHz. It features an integrated input splitter, output combiner, and matching networks, with independent bias control for carrier and peaking stages. Housed in a 7 mm × 7 mm LGA-7x7-20-2 package, it supports 10 W output power with drain efficiency up to 46.6% under W-CDMA modulation and provides gain flatness of 0.09 dB over the band. The device includes integrated ESD protection, operates with a maximum junction temperature of 175 °C, and meets RoHS compliance. Thermal resistance from junction to case is 10.79 K/W under typical operating conditions.