The AOWF8N50 is an N-channel MOSFET designed for AC-DC power supply applications, featuring a 500 V drain-source voltage rating and a continuous drain current of 8 A at 25°C. It is packaged in a TO-262F case with a maximum junction-to-case thermal resistance of 4.5 °C/W and a maximum junction-to-ambient thermal resistance of 65 °C/W. The device has a maximum on-resistance of 0.85 Ω at 10 V gate bias and 4 A drain current, a gate threshold voltage range of 3.4 V to 4.5 V, and a total gate charge up to 28 nC. It supports repetitive avalanche energy of 154 mJ and a single-pulse avalanche energy of 307 mJ. The junction and storage temperature range is -55°C to 150°C. The part is 100% UIS and Rg tested and meets RoHS standards.
Win Source Part Number: 1001984-AOWF8N50
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 27.8W (Tc)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262F
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1042 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Alpha & Omega Semiconductor Inc.
Base Product Number: AOWF8
Drive Voltage (Max Rds On, Min Rds On): 10V
| Win Source Electronics | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1001984-AOWF8N50 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | N-Channel |
