Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOWF7S65

Description
N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-262F
Request a Quote Datasheet
Description
N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-262F
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - 785-1531-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1531-5-ND
Single FETs, MOSFETs 785-1531-5-ND
N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-262F

N-Channel 650V 7A (Tc) 25W (Tc) Through Hole TO-262F

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF7S65 - 1017336-AOWF7S65 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF7S65
1017336-AOWF7S65
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF7S65 1017336-AOWF7S65
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017336-AOWF7S65 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 9.2nC @ 10V Max Input Capacitance: 434pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 650 mOhm @ 3.5A, 10V Alternative Parts (Cross-Reference): STFI13NM60N; AP10N70R-A; AOWF12N65; Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Limited

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017336-AOWF7S65
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 9.2nC @ 10V
Max Input Capacitance: 434pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 650 mOhm @ 3.5A, 10V
Alternative Parts (Cross-Reference): STFI13NM60N; AP10N70R-A; AOWF12N65;
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOWF7S65 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOWF7S65
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOWF7S65
MOSFET N-CH 650V 7A TO262F

MOSFET N-CH 650V 7A TO262F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1531-5-ND 1017336-AOWF7S65 AOWF7S65
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF7S65 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3 TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 650 volts
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