Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOWF2606

Description
N-Channel 60V 13A (Ta), 51A (Tc) 2.1W (Ta), 33.3W (Tc) Through Hole TO-262F
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Description
N-Channel 60V 13A (Ta), 51A (Tc) 2.1W (Ta), 33.3W (Tc) Through Hole TO-262F
Request a Quote Datasheet

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Single FETs, MOSFETs - 785-1448-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1448-5-ND
Single FETs, MOSFETs 785-1448-5-ND
N-Channel 60V 13A (Ta), 51A (Tc) 2.1W (Ta), 33.3W (Tc) Through Hole TO-262F

N-Channel 60V 13A (Ta), 51A (Tc) 2.1W (Ta), 33.3W (Tc) Through Hole TO-262F

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF2606 - 1017332-AOWF2606 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF2606
1017332-AOWF2606
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF2606 1017332-AOWF2606
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017332-AOWF2606 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 33.3W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-262F Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 13A (Ta), 51A (Tc) Gate-Source Threshold Voltage: 3.5V @ 250μA Max Gate Charge: 75nC @ 10V Max Input Capacitance: 4050pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.5 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 91 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017332-AOWF2606
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 33.3W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-262F
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 13A (Ta), 51A (Tc)
Gate-Source Threshold Voltage: 3.5V @ 250μA
Max Gate Charge: 75nC @ 10V
Max Input Capacitance: 4050pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.5 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 91 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOWF2606 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOWF2606
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOWF2606
MOSFET N-CH 60V 13A/51A TO262F

MOSFET N-CH 60V 13A/51A TO262F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1448-5-ND 1017332-AOWF2606 AOWF2606
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF2606 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA SOT3; TO-262F TO-262-3 Long Leads, I2PAK, TO-262AA
V(BR)DSS 60 volts
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