Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 199120-AOWF12N65
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 28W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 12A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 48nC @ 10V
Max Input Capacitance: 2150pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 720 mOhm @ 6A, 10V
Alternative Parts (Cross-Reference): STFI13NM60N; AOWF7S65; AP10N70R-A;
Popularity: Medium
Fake Threat In the Open Market: 90 pct.
Supply and Demand Status: Balance
N-Channel 650V 12A (Tc) 28W (Tc) Through Hole TO-262F
MOSFET N-CH 650V 12A TO262F
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 199120-AOWF12N65 | AOWF12N65-ND | AOWF12N65 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF12N65 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 650 volts | ||
| PD | 28000 milliwatts |
