Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF10N60 AOWF10N60

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017321-AOWF10N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-262F Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017321-AOWF10N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-262F Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF10N60 - 1017321-AOWF10N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF10N60
1017321-AOWF10N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF10N60 1017321-AOWF10N60
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017321-AOWF10N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-262F Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017321-AOWF10N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-262F
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - AOWF10N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOWF10N60-ND
Single FETs, MOSFETs AOWF10N60-ND
N-Channel 600V 10A (Tc) 25W (Tc) Through Hole TO-262F

N-Channel 600V 10A (Tc) 25W (Tc) Through Hole TO-262F

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOWF10N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOWF10N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOWF10N60
MOSFET N-CH 600V 10A TO262F

MOSFET N-CH 600V 10A TO262F

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1017321-AOWF10N60 AOWF10N60-ND AOWF10N60
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOWF10N60 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 25000 milliwatts
Unlock Full Specs
to access all available technical data