N-Channel 600V 4A (Tc) 83W (Tc) Through Hole TO-262
Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017318-AOW4S60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 4.1V @ 250μA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 263pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 900 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
MOSFET N-CH 600V 4A TO262
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | AOW4S60-ND | 1017318-AOW4S60 | AOW4S60 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW4S60 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-262-3 Long Leads, I2PAK, TO-262AA | SOT3; TO-262 | TO-262-3 Long Leads, I2PAK, TO-262AA |
| V(BR)DSS | 600 volts |
