Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOW29S50

Description
N-Channel 500V 29A (Tc) 357W (Tc) Through Hole TO-262
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Description
N-Channel 500V 29A (Tc) 357W (Tc) Through Hole TO-262
Request a Quote Datasheet

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Single FETs, MOSFETs - 785-1427-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1427-5-ND
Single FETs, MOSFETs 785-1427-5-ND
N-Channel 500V 29A (Tc) 357W (Tc) Through Hole TO-262

N-Channel 500V 29A (Tc) 357W (Tc) Through Hole TO-262

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW29S50 - 1145075-AOW29S50 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW29S50
1145075-AOW29S50
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW29S50 1145075-AOW29S50
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1145075-AOW29S50 Series: aMOS Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Family Name: AOW29S50 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.aosmd.com Manufacturer Package: TO-262 Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 3.9V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 26.6nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1312pF @ 100V Vgs (Maximum): ±30V Power Dissipation (Maximum): 357W (Tc) Rds On (Maximum) @ Id, Vgs: 150 mOhm @ 14.5A, 10V Alternative Parts (Cross-Reference): STB25NM50N-1; STFI20NK50Z; Introduction Date: April 08, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2019 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1145075-AOW29S50
Series: aMOS
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Family Name: AOW29S50
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.aosmd.com
Manufacturer Package: TO-262
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 3.9V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 26.6nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1312pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 357W (Tc)
Rds On (Maximum) @ Id, Vgs: 150 mOhm @ 14.5A, 10V
Alternative Parts (Cross-Reference): STB25NM50N-1; STFI20NK50Z;
Introduction Date: April 08, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2019
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOW29S50 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOW29S50
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOW29S50
MOSFET N-CH 500V 29A TO262

MOSFET N-CH 500V 29A TO262

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors RF Transistors
Product Number 785-1427-5-ND 1145075-AOW29S50 AOW29S50
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW29S50 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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