Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOW10T60P

Description
N-Channel 600V 10A (Tc) 208W (Tc) Through Hole TO-262
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Description
N-Channel 600V 10A (Tc) 208W (Tc) Through Hole TO-262
Request a Quote Datasheet

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Single FETs, MOSFETs - 785-1654-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1654-5-ND
Single FETs, MOSFETs 785-1654-5-ND
N-Channel 600V 10A (Tc) 208W (Tc) Through Hole TO-262

N-Channel 600V 10A (Tc) 208W (Tc) Through Hole TO-262

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW10T60P - 751856-AOW10T60P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW10T60P
751856-AOW10T60P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW10T60P 751856-AOW10T60P
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 751856-AOW10T60P Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-262-3 Long Leads, I2Pak, TO-262AA Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Family Name: AOW10T60P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.aosmd.com Manufacturer Package: TO-262 Channel Type Type: N Drain Source Voltage: 600V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 40nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 1595pF @ 100V Vgs (Maximum): ±30V Power Dissipation (Maximum): 208W (Tc) Rds On (Maximum) @ Id, Vgs: 700 mOhm @ 5A, 10V Alternative Parts (Cross-Reference): SPI08N50C3XK; SPI08N50C3E3046; SPI08N50C3HKSA1; ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 83 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 751856-AOW10T60P
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-262-3 Long Leads, I2Pak, TO-262AA
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Family Name: AOW10T60P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.aosmd.com
Manufacturer Package: TO-262
Channel Type Type: N
Drain Source Voltage: 600V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 40nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 1595pF @ 100V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 208W (Tc)
Rds On (Maximum) @ Id, Vgs: 700 mOhm @ 5A, 10V
Alternative Parts (Cross-Reference): SPI08N50C3XK; SPI08N50C3E3046; SPI08N50C3HKSA1;
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOW10T60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOW10T60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOW10T60P
MOSFET N-CH 600V 10A TO262

MOSFET N-CH 600V 10A TO262

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1654-5-ND 751856-AOW10T60P AOW10T60P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW10T60P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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