Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW10N60 AOW10N60

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017300-AOW10N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 93 pct. Supply and Demand Status: Balance
Request a Quote Datasheet
Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017300-AOW10N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 93 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW10N60 - 1017300-AOW10N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW10N60
1017300-AOW10N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW10N60 1017300-AOW10N60
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017300-AOW10N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-262 Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 93 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017300-AOW10N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-262
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 93 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
600V 10A MOSFET Transistor
278-AOW10N60
600V 10A MOSFET Transistor 278-AOW10N60
MOSFET N-CH 600V 10A TO262 Product overview: AOW10N60 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOW10N60 can be used for catalog matching and distributor lookup.

MOSFET N-CH 600V 10A TO262 Product overview: AOW10N60 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOW10N60 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - AOW10N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOW10N60-ND
Single FETs, MOSFETs AOW10N60-ND
N-Channel 600V 10A (Tc) 250W (Tc) Through Hole TO-262

N-Channel 600V 10A (Tc) 250W (Tc) Through Hole TO-262

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOW10N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOW10N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOW10N60
MOSFET N-CH 600V 10A TO262

MOSFET N-CH 600V 10A TO262

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1017300-AOW10N60 278-AOW10N60 AOW10N60-ND AOW10N60
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOW10N60 600V 10A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts
PD 250000 milliwatts 250000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

GaAs Fet Switches - KS204 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 20 to 8000 MHz
View Details
DC - 20 GHz, 250 um Discrete GaAs pHEMT Die - QPD2025D - Qorvo
Specs
Transistor Type PHEMT
Transistor Technology / Material DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
Transistor Grade / Operating Range Military
View Details
2 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SA1208S-AE - 855021-2SA1208S-AE - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details