Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOU2N60A

Description
N-Channel 600V 2A (Tc) 57W (Tc) Through Hole TO-251-3
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Description
N-Channel 600V 2A (Tc) 57W (Tc) Through Hole TO-251-3
Request a Quote Datasheet

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Single FETs, MOSFETs - AOU2N60A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOU2N60A-ND
Single FETs, MOSFETs AOU2N60A-ND
N-Channel 600V 2A (Tc) 57W (Tc) Through Hole TO-251-3

N-Channel 600V 2A (Tc) 57W (Tc) Through Hole TO-251-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU2N60A - 1017291-AOU2N60A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU2N60A
1017291-AOU2N60A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU2N60A 1017291-AOU2N60A
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017291-AOU2N60A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 57W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -50°C to 150°C (TJ) Case / Package: TO-251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 2A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 11nC @ 10V Max Input Capacitance: 295pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 4.7 Ohm @ 1A, 10V Popularity: Medium Fake Threat In the Open Market: 92 pct. Supply and Demand Status: Sufficient

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017291-AOU2N60A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 57W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -50°C to 150°C (TJ)
Case / Package: TO-251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 11nC @ 10V
Max Input Capacitance: 295pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 4.7 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 92 pct.
Supply and Demand Status: Sufficient

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - AOU2N60A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
AOU2N60A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single AOU2N60A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOU2N60A-ND 1017291-AOU2N60A AOU2N60A
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOU2N60A Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel N-Channel; N-Channel
Package Type TO-251-3 Short Leads, IPAK, TO-251AA SOT3; TO-251-3
V(BR)DSS 600 volts
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