Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOTF4T60P

Description
N-Channel 600V 4A (Tc) 35W (Tc) Through Hole TO-220F
Request a Quote Datasheet
Description
N-Channel 600V 4A (Tc) 35W (Tc) Through Hole TO-220F
Request a Quote Datasheet

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Product
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Single FETs, MOSFETs - AOTF4T60P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOTF4T60P-ND
Single FETs, MOSFETs AOTF4T60P-ND
N-Channel 600V 4A (Tc) 35W (Tc) Through Hole TO-220F

N-Channel 600V 4A (Tc) 35W (Tc) Through Hole TO-220F

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF4T60P - 1017281-AOTF4T60P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF4T60P
1017281-AOTF4T60P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF4T60P 1017281-AOTF4T60P
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017281-AOTF4T60P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 15nC @ 10V Max Input Capacitance: 522pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 89 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017281-AOTF4T60P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 15nC @ 10V
Max Input Capacitance: 522pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 2.1 Ohm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 89 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - AOTF4T60P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
AOTF4T60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single AOTF4T60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOTF4T60P-ND 1017281-AOTF4T60P AOTF4T60P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF4T60P Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220-3F
V(BR)DSS 600 volts
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