Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOTF3N90

Description
N-Channel 900V 2.4A (Tc) 35W (Tc) Through Hole TO-220F
Request a Quote Datasheet
Description
N-Channel 900V 2.4A (Tc) 35W (Tc) Through Hole TO-220F
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AOTF3N90-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOTF3N90-ND
Single FETs, MOSFETs AOTF3N90-ND
N-Channel 900V 2.4A (Tc) 35W (Tc) Through Hole TO-220F

N-Channel 900V 2.4A (Tc) 35W (Tc) Through Hole TO-220F

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF3N90 - 199116-AOTF3N90 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF3N90
199116-AOTF3N90
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF3N90 199116-AOTF3N90
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 199116-AOTF3N90 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 35W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 900V Continuous Drain Current at 25°C: 2.4A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 540pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 6.7 Ohm @ 1.5A, 10V Popularity: Medium Fake Threat In the Open Market: 75 pct. Supply and Demand Status: Limited

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 199116-AOTF3N90
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 35W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 900V
Continuous Drain Current at 25°C: 2.4A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 540pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6.7 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 75 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOTF3N90 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOTF3N90
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOTF3N90
MOSFET N-CH 900V 2.4A TO220-3F

MOSFET N-CH 900V 2.4A TO220-3F

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOTF3N90-ND 199116-AOTF3N90 AOTF3N90
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF3N90 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220-3F TO-220; TO-220-3 Full Pack
V(BR)DSS 900 volts
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