MOSFET N-CH 600V 20A TO220F Product overview: AOTF190A60L from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOTF190A60L can be used for catalog matching and distributor lookup.
N-Channel 600V 20A (Tc) 32W (Tc) Through Hole TO-220F
Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 861149-AOTF190A60L
Series: aMOS5™
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 600 V 20A (Tc) 32W (Tc) Through Hole TO-220F
Package: TO-220-3 Full Pack
Package: Tube
Mounting: Through Hole
Family Name: AOTF190
Categories: Discrete Semiconductor Products
Case / Package: TO-220F
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Limited
Quantity per package: 1000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 25 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
MOSFET N-CH 600V 20A TO220F
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-AOTF190A60L | 785-1789-ND | 861149-AOTF190A60L | AOTF190A60L |
| Product Name | 600V 20A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF190A60L | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 600 volts | |||
| PD | 32000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |