Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1106812-AOTF11S65L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 31W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 13.2nC @ 10V
Max Input Capacitance: 646pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 399 mOhm @ 5.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Balance
N-Channel 650V 11A (Tc) 31W (Tc) Through Hole TO-220F
MOSFET N-CH 650V 11A TO220-3F
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1106812-AOTF11S65L | 785-1517-5-ND | AOTF11S65L |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF11S65L | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 650 volts | ||
| PD | 31000 milliwatts |
