Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOTF10N60

Description
N-Channel 600V 10A (Tc) 50W (Tc) Through Hole TO-220F
Request a Quote Datasheet
Description
N-Channel 600V 10A (Tc) 50W (Tc) Through Hole TO-220F
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - AOTF10N60-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
AOTF10N60-ND
Single FETs, MOSFETs AOTF10N60-ND
N-Channel 600V 10A (Tc) 50W (Tc) Through Hole TO-220F

N-Channel 600V 10A (Tc) 50W (Tc) Through Hole TO-220F

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF10N60 - 120258-AOTF10N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF10N60
120258-AOTF10N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF10N60 120258-AOTF10N60
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 120258-AOTF10N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3F Dimension: TO-220-3 Full Pack Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 10A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 40nC @ 10V Max Input Capacitance: 1600pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V Popularity: Medium Fake Threat In the Open Market: 82 pct. Supply and Demand Status: Limited

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 120258-AOTF10N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3F
Dimension: TO-220-3 Full Pack
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 10A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 40nC @ 10V
Max Input Capacitance: 1600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 750 mOhm @ 5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 82 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOTF10N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOTF10N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOTF10N60
MOSFET N-CH 600V 10A TO220-3F

MOSFET N-CH 600V 10A TO220-3F

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number AOTF10N60-ND 120258-AOTF10N60 AOTF10N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOTF10N60 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack TO-220; SOT3; TO-220-3F TO-220; TO-220-3 Full Pack
V(BR)DSS 600 volts
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