Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT9N40L AOT9N40L

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017236-AOT9N40L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 132W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 760pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 86 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017236-AOT9N40L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 132W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 760pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 86 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT9N40L - 1017236-AOT9N40L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT9N40L
1017236-AOT9N40L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT9N40L 1017236-AOT9N40L
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017236-AOT9N40L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 132W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 400V Continuous Drain Current at 25°C: 8A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 16nC @ 10V Max Input Capacitance: 760pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 800 mOhm @ 4A, 10V Popularity: Medium Fake Threat In the Open Market: 86 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017236-AOT9N40L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 132W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 400V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 760pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 800 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1017236-AOT9N40L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT9N40L
Polarity N-Channel; N-Channel
V(BR)DSS 400 volts
PD 132000 milliwatts
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