Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT8N60 AOT8N60

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 078201-AOT8N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 208W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 35nC @ 10V
Max Input Capacitance: 1370pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 900 mOhm @ 4A, 10V
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

MOSFET N-CH 600V 8A TO220 Product overview: AOT8N60 from Alpha and Omega Semiconductor, Inc. is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 8A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 8A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-AOT8N60 can be used for catalog matching and distributor lookup.

N-Channel 600V 8A (Tc) 208W (Tc) Through Hole TO-220