Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOT5N60

Description
N-Channel 600V 5A (Tc) 132W (Tc) Through Hole TO-220
Request a Quote Datasheet
Description
N-Channel 600V 5A (Tc) 132W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - 785-1188-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1188-5-ND
Single FETs, MOSFETs 785-1188-5-ND
N-Channel 600V 5A (Tc) 132W (Tc) Through Hole TO-220

N-Channel 600V 5A (Tc) 132W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT5N60 - 1017229-AOT5N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT5N60
1017229-AOT5N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT5N60 1017229-AOT5N60
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017229-AOT5N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 132W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 5A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 20nC @ 10V Max Input Capacitance: 700pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2.5A, 10V Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017229-AOT5N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 132W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 5A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 700pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 1.8 Ohm @ 2.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOT5N60 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOT5N60
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOT5N60
MOSFET N-CH 600V 5A TO220

MOSFET N-CH 600V 5A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1188-5-ND 1017229-AOT5N60 AOT5N60
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT5N60 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3
V(BR)DSS 600 volts
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