Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOT430

Description
MOSFET N-CH 75V 80A TO220
Request a Quote Datasheet
Description
MOSFET N-CH 75V 80A TO220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - AOT430 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AOT430
Single FETs, MOSFETs AOT430
MOSFET N-CH 75V 80A TO220

MOSFET N-CH 75V 80A TO220

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT430 - 078197-AOT430 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT430
078197-AOT430
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT430 078197-AOT430
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 078197-AOT430 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 268W (Tc) Family Name: AOT430 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 114nC @ 10V Max Input Capacitance: 4700pF @ 30V Maximum Gate-Source Voltage: ±25V Maximum Rds On at Id,Vgs: 11.5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): IXTP70N075T2; IXTP76N075T; STP75NF68; AUIRF3007; Introduction Date: August 31, 2006 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2025 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 84 pct. Supply and Demand Status: Limited

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 078197-AOT430
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 268W (Tc)
Family Name: AOT430
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 114nC @ 10V
Max Input Capacitance: 4700pF @ 30V
Maximum Gate-Source Voltage: ±25V
Maximum Rds On at Id,Vgs: 11.5 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): IXTP70N075T2; IXTP76N075T; STP75NF68; AUIRF3007;
Introduction Date: August 31, 2006
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 84 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 785-1145-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1145-5-ND
Single FETs, MOSFETs 785-1145-5-ND
N-Channel 75V 80A (Tc) 268W (Tc) Through Hole TO-220

N-Channel 75V 80A (Tc) 268W (Tc) Through Hole TO-220

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number AOT430 078197-AOT430 785-1145-5-ND
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT430 Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 75 volts 75 volts
IDSS 80000 milliamps
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