N-Channel 1000V 2.8A (Tc) 132W (Tc) Through Hole TO-220
Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017213-AOT3N100
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 132W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 2.8A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 20nC @ 10V
Max Input Capacitance: 830pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 6 Ohm @ 1.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 1000V 2.8A TO220
| DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | AOT3N100-ND | 1017213-AOT3N100 | AOT3N100 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT3N100 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220 | TO-220; TO-220-3 |
| V(BR)DSS | 1000 volts |
