Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT27S60L AOT27S60L

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017202-AOT27S60L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 357W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1294pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 160 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
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Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017202-AOT27S60L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 357W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1294pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 160 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT27S60L - 1017202-AOT27S60L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT27S60L
1017202-AOT27S60L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT27S60L 1017202-AOT27S60L
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017202-AOT27S60L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 357W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 27A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 26nC @ 10V Max Input Capacitance: 1294pF @ 100V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 160 mOhm @ 13.5A, 10V Popularity: Medium Fake Threat In the Open Market: 77 pct. Supply and Demand Status: Sufficient Quantity per package: 1k pcs

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017202-AOT27S60L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 357W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 27A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 26nC @ 10V
Max Input Capacitance: 1294pF @ 100V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 160 mOhm @ 13.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 77 pct.
Supply and Demand Status: Sufficient
Quantity per package: 1k pcs

Buy Now Datasheet
Single FETs, MOSFETs - AOT27S60L - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
AOT27S60L
Single FETs, MOSFETs AOT27S60L
MOSFET N-CH 600V 27A TO220

MOSFET N-CH 600V 27A TO220

Supplier's Site Datasheet
Single FETs, MOSFETs - 785-1252-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1252-5-ND
Single FETs, MOSFETs 785-1252-5-ND
N-Channel 600V 27A (Tc) 357W (Tc) Through Hole TO-220

N-Channel 600V 27A (Tc) 357W (Tc) Through Hole TO-220

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOT27S60L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOT27S60L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOT27S60L
MOSFET N-CH 600V 27A TO220

MOSFET N-CH 600V 27A TO220

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1017202-AOT27S60L AOT27S60L 785-1252-5-ND AOT27S60L
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT27S60L Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 600 volts 600 volts
PD 357000 milliwatts 357000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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