Alpha & Omega Semiconductor, Ltd. Single FETs, MOSFETs AOT2608L

Description
N-Channel 60V 11A (Ta), 72A (Tc) 2.1W (Ta), 100W (Tc) Through Hole TO-220
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Description
N-Channel 60V 11A (Ta), 72A (Tc) 2.1W (Ta), 100W (Tc) Through Hole TO-220
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 785-1437-5-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
785-1437-5-ND
Single FETs, MOSFETs 785-1437-5-ND
N-Channel 60V 11A (Ta), 72A (Tc) 2.1W (Ta), 100W (Tc) Through Hole TO-220

N-Channel 60V 11A (Ta), 72A (Tc) 2.1W (Ta), 100W (Tc) Through Hole TO-220

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT2608L - 1017197-AOT2608L - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT2608L
1017197-AOT2608L
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT2608L 1017197-AOT2608L
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1017197-AOT2608L Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 11A (Ta), 72A (Tc) Gate-Source Threshold Voltage: 3.6V @ 250μA Max Gate Charge: 55nC @ 10V Max Input Capacitance: 2995pF @ 30V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8 mOhm @ 20A, 10V Popularity: Medium Fake Threat In the Open Market: 86 pct. Supply and Demand Status: Balance

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 1017197-AOT2608L
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.1W (Ta), 100W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 11A (Ta), 72A (Tc)
Gate-Source Threshold Voltage: 3.6V @ 250μA
Max Gate Charge: 55nC @ 10V
Max Input Capacitance: 2995pF @ 30V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8 mOhm @ 20A, 10V
Popularity: Medium
Fake Threat In the Open Market: 86 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - AOT2608L - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
AOT2608L
Discrete Semiconductor Products - Transistors - FETs, MOSFETs AOT2608L
MOSFET N-CH 60V 11A/72A TO220

MOSFET N-CH 60V 11A/72A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 785-1437-5-ND 1017197-AOT2608L AOT2608L
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT2608L Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220 TO-220; TO-220-3
V(BR)DSS 60 volts
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