Alpha & Omega Semiconductor, Ltd. TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT20N60 AOT20N60

Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 199106-AOT20N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 417W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 74nC @ 10V Max Input Capacitance: 3680pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 370 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 93 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 199106-AOT20N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 417W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 74nC @ 10V Max Input Capacitance: 3680pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 370 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 93 pct. Supply and Demand Status: Limited
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT20N60 - 199106-AOT20N60 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT20N60
199106-AOT20N60
TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT20N60 199106-AOT20N60
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 199106-AOT20N60 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 417W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 74nC @ 10V Max Input Capacitance: 3680pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 370 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 93 pct. Supply and Demand Status: Limited

Manufacturer: Alpha & Omega Semiconductor Inc.
Win Source Part Number: 199106-AOT20N60
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 417W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 74nC @ 10V
Max Input Capacitance: 3680pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 370 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 93 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 199106-AOT20N60
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - AOT20N60
Polarity N-Channel; N-Channel
V(BR)DSS 600 volts
PD 417000 milliwatts
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